2013-09-19 1 BFP420 1 2 3 4 low noise silicon bipolar rf transistor ? for high gain and low noise amplifiers ? minimum noise figure nf min = 1.1 db at 1.8 ghz outstanding g ms = 21 db at 1.8 ghz ? for oscillators up to 10 ghz ? transition frequency f t = 25 ghz ? pb-free (rohs compliant) and halogen-free package with visible leads ? qualification report according to aec-q101 available esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFP420 ams 1=b 2=e 3=c 4=e - - sot343 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage t a = 25 c t a = -55 c v ceo 4.5 4.1 v collector-emitter voltage v ces 15 collector-base voltage v cbo 15 emitter-base voltage v ebo 1.5 collector current i c 60 ma base current i b 9 total power dissipation 1) t s 98 c p tot 210 mw junction temperature t j 150 c storage temperature t st g -55 ... 150 1 t s is measured on the emitter lead at the soldering point to the pcb thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 250 k/w
2013-09-19 2 BFP420 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4.5 5 - v collector-emitter cutoff current v ce = 15 v, v be = 0 i ces - - 10 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 20 ma, v ce = 4 v, pulse measured h fe 60 95 130 - 1 for the definition of r thjs please refer to application note an077 (thermal resistance calculation)
2013-09-19 3 BFP420 electrical characteristics at t a = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 30 ma, v ce = 3 v, f = 2 ghz f t 18 25 - ghz collector-base capacitance v cb = 2 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.15 0.3 pf collector emitter capacitance v ce = 2 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.37 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.55 - minimum noise figure i c = 5 ma, v ce = 2 v, f = 1.8 ghz, z s = z sopt nf min - 1.1 - db power gain, maximum stable 1) i c = 20 ma, v ce = 2 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 21 - db insertion power gain v ce = 2 v, i c = 20 ma, f = 1.8 ghz, z s = z l = 50 ? | s 21 | 2 14 17 - third order intercept point at output 2) v ce = 2 v, i c = 20 ma, f = 1.8 ghz, z s = z l = 50 ? ip3 - 22 - dbm 1db compression point at output i c = 20 ma, v ce = 2 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 12 - 1 g ms = | s 21 / s 12 | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
2013-09-19 4 BFP420 total power dissipation p tot = ? ( t s ) 0 30 60 90 c 150 t s 0 30 60 90 120 150 180 mw 240 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector-base capacitance c cb = ? ( v cb ) f = 1mhz 0 1 2 v 4 v cb 0 0.05 0.1 0.15 0.2 pf 0.3 c cb
2013-09-19 5 BFP420 transition frequency f t = ? ( i c ) f = 2 ghz v ce = parameter in v 0 5 10 15 20 25 30 ma 40 i c 0 2 4 6 8 10 12 14 16 18 20 22 24 ghz 30 f t 2 to 4 1.5 1 0.75 0.5 power gain g ma , g ms , | s 21 |2 = ? ( f ) v ce = 2 v, i c = 20 ma 0 1 2 3 4 5 6 0 4 8 12 16 20 24 28 32 36 40 44 f [ghz] g [db] g ms g ma |s 21 | 2 power gain g ma , g ms = ? ( i c ) v ce = 2v f = parameter in ghz 0 4 8 12 16 20 24 28 32 ma 40 i c 0 2 4 6 8 10 12 14 16 18 20 22 24 db 30 g 0.9 1.8 2.4 3 4 5 6 power gain g ma , g ms = ? ( v ce ) i c = 20 ma f = parameter in ghz 0 0.5 1 1.5 2 2.5 3 3.5 v 4.5 v ce 0 2 4 6 8 10 12 14 16 18 20 22 24 db 30 g 0.9 1.8 2.4 3 4 5 6
2013-09-19 6 BFP420 noise figure f = ? ( i c ) v ce = 2 v, z s = z sopt 0 4 8 12 16 20 24 28 32 ma 38 i c 0 0.5 1 1.5 2 2.5 3 db 4 f f = 6 ghz f = 5 ghz f = 4 ghz f = 3 ghz f = 2.4 ghz f = 1.8 ghz f = 0.9 ghz noise figure f = ? ( i c ) v ce = 2 v, f = 1.8 ghz 0 4 8 12 16 20 24 28 ma 36 i c 0 0.5 1 1.5 2 db 3 f zs = 50 ohm zs = zsopt noise figure f = ? ( f ) v ce = 2 v, z s = z sopt 0 1 2 3 4 ghz 6 f 0 0.5 1 1.5 2 db 3 f ic = 20 ma ic = 5 ma source impedance for min. noise figure vs. frequency v ce = 2 v, i c = 5 ma / 20 ma 100 +j10 -j10 50 +j25 -j25 25 +j50 -j50 10 +j100 -j100 0 3ghz 4ghz 5ghz 0.45ghz 0.9ghz 1.8ghz 2.4ghz 6ghz
2013-09-19 7 BFP420 spice gp model for the spice gummel poon (gp) model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models . please consult our website and download the latest versions before actually starting your design. you find the BFP420 spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very quickly and conveniently. the model already contains the package parasitics and is ready to use for dc and high frequency simulations. the terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 10 ghz using typical devices. the BFP420 spice gp model reflects the typical dc- and rf-performance within the limitations which are given by the spice gp model itself. besides the dc characteristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
2013-09-19 8 BFP420 package sot343
2013-09-19 9 BFP420 edition 2009-12-02 published by infineon technologies ag 85579 neubiberg, germany ? infineon technologies ag 2009. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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